|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
inchange semiconductor product specification silicon npn power transistors BUV21 description ? ? with to-3 package ? high dc current gain@i c =12a ? fast switching times ? low collector saturation voltage applications ? designed for high current,high speed and high power applications. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current 40 a i cm collector current-peak 50 a i b base current 8 a p t total power dissipation t c =25 ?? 150 w t j junction temperature -65~200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.7 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUV21 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b =0;l=25mh 200 v v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =12 a;i b =1.2a 0.6 v v cesat-2 collector-emitter saturation voltage i c =25 a;i b =3a 1.5 v v besat base-emitter saturation voltage i c =25a;i b =3a 1.5 v i cex collector cut-off current v ce =250v;v be =-1.5v t c =125 ?? 3.0 12 ma i ceo collector cut-off current v ce =160v;i b =0 3.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =12a ; v ce =2v 20 60 h fe-2 dc current gain i c =25a ; v ce =4v 10 f t transition frequency i c =2a ; v ce =15v; f=4mhz 8.0 mhz switching times t on turn-on time 1.0 | s t s storage time 1.8 | s t f fall time i c =25a ;i b1 =-i b2 =3a v cc =100v ;r c =4 |? 0.4 | s inchange semiconductor product specification 3 silicon npn power transistors BUV21 package outline fig.2 outline dimensions |
Price & Availability of BUV21 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |